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Fairview Microwave
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SPA-110-30-04-SMA

8.5 - 11

30

0.75

5

+36

4

+45

12 / 4,500

1.5 x 1.2 x 0.56

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SPA-110-30-01-SMA

8.5 - 11

30

0.5

3

+30

1

+38

15 / 900

3.97 x 3.64 x 0.67

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SPA-120-41-01-SMA

8 - 12

41

1

3.5

+30

1

12/1200

2.36 x 2.91 x 0.63

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SLNA-120-38-22-SMA

8 - 12

38

1

2.2

2:1

2:1

13

13/250

1.583 x 1.093 x 0.382

Part No.

Frequency Band
(dB)

Gain
(dB)

Gain
Variation
+/-(dB)

NF
(dB)

P1dB
(dBm)

P1dB
(Watts)

IP3
(dBm)

DC Power
(Volts/mA)

Mechanical Dimensions
L(in) X W(in) X H(in)

Part No.

Frequency Band
(dB)

Gain
(dB)

Gain
Variation
+/-(dB)

NF
(dB)

Input
(VSWR)

Output
(VSWR)

Psat
(dBm)
Min

DC Power
(Volts/mA)

Mechanical Dimensions
L(in) X W(in) X H(in)

  • 8 to 12 GHz max. frequency
  • 1 Watt & 4 Watt Power Amplifier models
  • Low Noise Amplifier Model - 2.2 dB noise figure
  • 30 to 41 dB small signal gain
  • +12 to +15 DC Voltage
  • Hermetically-sealed modules
  • SMA Connectors
  • Unconditionally stable
  • EAR99 (No Export License Required)

All available for same-day shipping!

X-Band GaAs PHEMT MMIC Based LNA
and High Power Coaxial Amplifiers

New Selection of

X-Band High Power Coaxial Amplifiers

X-Band Low Noise Coaxial Amplifier

X-Band GaAs PHEMT MMIC Based LNA and High Power Coaxial Amplifiers

Our X band amplifiers from Fairview Microwave exhibit high gain and are perfectly suited for high linearity applications with frequencies that cover 8 to 12 GHz. Gain levels range from 30 to 41 dB over a temperature of -30°C and +70°C. The excellent gain flatness of these high gain amplifiers ranges from ±0.50 dB to ±1.0 dB and the IP3 output performs up to +45 dBm. The new low noise amplifier model exhibits a competitive noise figure of 2.2 dB and the RF power amplifiers are offered in 1 Watt and 4 Watt designs depending on the configuration.

These X band LNA and power amplifiers are packaged inside hermetically-sealed metal enclosures and exhibit outstanding performance for low noise, high gain, gain flatness, high linearity and wide dynamic range. This excellent performance is achieved by using hybrid microwave integrated circuit designs and advanced GaAs pHEMT technology. The connectorized SMA amplifier modules are unconditionally stable and include built-in voltage regulation, bias sequencing, and reverse bias protection for added reliability. These RF amplifiers have over-voltage protection that’s installed externally for easy repair.

 

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QUESTIONS?

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